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| ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. It consists of an ALD1101 N-channel MOSFET pair and an ALD1102 P-channel MOSFET pair in one package. The ALD1103 offers high input impedance and negative current temperature coefficient. The transistor pair is matched for minimum offset voltage and differential thermal response, and it is designed for precision signal switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. When used in pairs, a dual CMOS analog switch can be constructed. In addition, the ALD1103 is intended as a building block for differential amplifier input stages, transmission gates, and multiplexer applications. The ALD1103 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 50pA at room temperature. For example, DC beta of the device at a drain current of 5mA at 25C is = 5mA/50pA = 100,000,000. FEATURES * Thermal tracking between N-channel and P-channel pairs * Low threshold voltage of 0.7V for both N-channel & P-channel MOSFETS * Low input capacitance * Low Vos -- 10mV * High input impedance -- 1013 typical * Low input and output leakage currents * Negative current (IDS) temperature coefficient * Enhancement mode (normally off) * DC current gain 109 * Matched N-channel and matched P-channel in one package APPLICATIONS * * * * * * * * * * Precision current mirrors Complementary push-pull linear drives Analog switches Choppers Differential amplifier input stage Voltage comparator Data converters Sample and Hold Analog inverter Precision matched current sources PIN CONFIGURATION DN1 GN1 SN1 VDP1 GP1 SP1 1 2 3 4 5 6 7 DB, PB, SB PACKAGE 14 13 12 11 10 9 8 DN2 GN2 SN2 V+ DP2 GP2 SP2 BLOCK DIAGRAM N GATE 1 (2) N DRAIN 1 (1) N SOURCE 1 (3) SUBSTRATE (4) N DRAIN 2 (14) N SOURCE 2 (12) N GATE 2 (13) ORDERING INFORMATION -55C to +125C 14-Pin CERDIP Package ALD1103 DB Operating Temperature Range* 0C to +70C 0C to +70C 14-Pin Plastic Dip Package ALD1103 PB 14-Pin SOIC Package ALD1103 SB P GATE 1 (6) P DRAIN 1 (5) P SOURCE 1 (7) SUBSTRATE (11) P DRAIN 2 (10) P SOURCE 2 (8) * Contact factory for industrial temperature range. P GATE 2 (9) (c) 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com ABSOLUTE MAXIMUM RATINGS Drain-source voltage, VDS Gate-source voltage, VGS Power dissipation Operating temperature range Storage temperature range Lead temperature, 10 seconds 13.2V 13.2V 500 mW 0C to +70C -55C to +125C -65C to +150C +260C PB, SB package DB package OPERATING ELECTRICAL CHARACTERISTICS T A = 25C unless otherwise specified N - Channel Parameter Symbol Min Typ Max Gate Threshold VT 0.4 0.7 1.0 Voltage Offset Voltage VGS1 - VGS2 VOS 10 Unit V Test Conditions IDS = 10A VGS = VDS IDS = 100A VGS = VDS P - Channel Min Typ Max -0.4 -0.7 -1.2 Unit V Test Conditions IDS = -10A VGS = V DS IDS = -100A VGS = V DS mV 10 mV Gate Threshold Temperature TCVT Drift On Drain Current Trans-. conductance Mismatch Output Conductance Drain Source ON Resistance IDS (ON) G fs G fs G OS RDS(ON) 25 -1.2 mV/C -1.3 mV/C 40 mA VGS = V DS = 5V VDS = 5V IDS= 10mA -8 -16 mA VGS = VDS = -5V VDS = -5V IDS= -10mA 5 10 mmho 2 4 mmho 0.5 200 % mho VDS = 5V IDS = 10mA VDS = 0.1V VGS = 5V 0.5 500 % mho VDS = -5V IDS = -10mA VDS = -0.1V VGS = -5V 50 75 180 270 Drain Source ON Resistance RDS(ON) Mismatch Drain Source Breakdown Voltage Off Drain Current Gate Leakage Current Input Capacitance 0.5 % VDS = 0.1V VGS = 5V 0.5 % VDS = -0.1V VGS = -5V BVDSS IDS(OFF) IGSS CISS 12 V IDS = 10A VGS =0V VDS =12V IGS = 0V TA = 125C VDS = 0V VGS =12V TA = 125C -12 V IDS = -10A VGS =0V VDS = -12V VGS = 0V TA = 125C VDS = 0V VGS =-12V TA = 125C 0.1 4 4 50 10 10 nA A pA nA pF 0.1 4 4 50 10 10 nA A pA nA pF 1 1 6 6 ALD1103 Advanced Linear Devices 2 P- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS 4 DRAIN - SOURCE CURRENT (mA) VBS = 0V TA = 25C VGS = -12V -10V -8V -6V -20 -4V -2V 0 0 -2 -4 -6 -8 -10 -12 DRAIN - SOURCE VOLTAGE (V) LOW VOLTAGE OUTPUT CHARACTERISTICS DRAIN-SOURCE CURRENT (mA) VBS = 0V TA = 25C 2 VGS = -12V -6V -4V -2V 0 -80 -60 -40 -2 -4 -320 -160 0 160 320 DRAIN -SOURCE VOLTAGE (mV) FORWARD TRANSCONDUCTANCE vs. DRAIN - SOURCE VOLTAGE FORWARD TRANSCONDUCTANCE (mho) 10000 5000 2000 1000 500 200 100 0 -2 -4 -6 -8 -10 -12 TA = +25C IDS = -1mA TA = +125C -20 TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS DRAIN-SOURCE CURRENT (A) VBS = 0V -15 2V 4V 6V 8V 10V 12V VBS = 0V f = 1KHz IDS = -5mA -10 -5 VGS = VDS TA = 25C 0 0 -0.8 -1.6 -2.4 -3.2 -4.0 DRAIN - SOURCE VOLTAGE (V) GATE - SOURCE VOLTAGE (V) RDS (ON) vs. GATE - SOURCE VOLTAGE DRAIN - SOURCE ON RESISTANCE () OFF - DRAIN SOURCE CURRENT (A) 10000 VDS = 0.4V VBS = 0V 1000 TA = +125C -10X10-6 OFF DRAIN - CURRENT vs. TEMPERATURE VDS = -12V VGS = VBS = 0V -10X10-9 100 TA = +25C 10 0 -2 -4 -6 -8 -10 -12 -10X10-12 -50 -25 0 +25 +50 +75 +100 +125 GATE - SOURCE VOLTAGE (V) TEMPERATURE (C) ALD1103 Advanced Linear Devices 3 N- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS 8 DRAIN -SOURCE CURRENT (mA) LOW VOLTAGE OUTPUT CHARACTERISTICS DRAIN-SOURCE CURRENT (mA) VBS = 0V TA = 25C 4 VGS = 12V 6V 4V 2V 0 160 VBS = 0V TA = 25C VGS = 12V 10V 8V 120 80 6V 4V 2V 40 -4 0 0 2 4 6 8 10 12 DRAIN-SOURCE VOLTAGE (V) -8 -160 -80 0 80 160 DRAIN -SOURCE VOLTAGE (mV) FORWARD TRANSCONDUCTANCE (mho) 1 x105 5 x104 2 x104 FORWARD TRANSCONDUCTANCE vs. DRAIN-SOURCE VOLTAGE 20 TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS DRAIN-SOURCE CURRENT (A) VGS = VDS TA = 25C 15 VBS = 0V 10 -2V -4V -6V -8V -10V 5 -12V VBS = 0V f = 1KHz TA = +125C TA = +25C IDS = 10mA 1 x104 5 x103 2 x103 1 x103 0 2 4 IDS = 1mA 6 8 10 12 0 0 0.8 1.6 2.4 3.2 4.0 DRAIN -SOURCE VOLTAGE (V) GATE - SOURCE VOLTAGE (V) RDS (ON) vs. GATE - SOURCE VOLTAGE DRAIN - SOURCE ON RESISTANCE () OFF - DRAIN SOURCE CURRENT (A) 10000 VDS = 0.2V VBS = 0V 1000 TA = +125C 100 10X10-6 OFF DRAIN - CURRENT vs. TEMPERATURE VDS = +12V VGS = VBS = 0V 10X10-9 10 0 TA = +25C 2 4 6 8 10 12 10X10-12 -50 -25 0 +25 +50 +75 +100 +125 GATE SOURCE VOLTAGE (V) TEMPERATURE (C) ALD1103 Advanced Linear Devices 4 TYPICAL APPLICATIONS CURRENT SOURCE MIRROR V+ = +5V CURRENT SOURCE WITH GATE CONTROL V+ = +5V 1/2 ALD1103 V+ = +5V Q3 Q4 Q3 Q4 ISET RSET ISET I SOURCE RSET ISOURCE Digital Logic Control of Current Source ON Q1 1/4 ALD1103 OFF : N - Channel MOSFET Q1 Q3,Q4 : P - Channel MOSFET Q1 Q2 ALD1103 Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET I SOURCE = ISET = V+ -Vt RSET ~ = 4 RSET DIFFERENTIAL AMPLIFIER V+ CURRENT SOURCE MULTIPLICATION V+ = +5V PMOS PAIR Q3 Q4 VOUT ISET RSET ISOURCE = ISET x N VIN+ Q1 Q2 NMOS PAIR QSET Q1 Q2 Q3 QN VIN- ALD1103 Current Source Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET QSET, Q1..QN: ALD 1101 or ALD 1103 N - Channel MOSFET ALD1103 Advanced Linear Devices 5 TYPICAL APPLICATIONS BASIC CURRENT SOURCES N- CHANNEL CURRENT SOURCE V+ = +5V ISET ISOURCE RSET P- CHANNEL CURRENT SOURCE V+ = +5V 1/2 ALD1103 8 7 6 3 2 5 I SOURCE ISET RSET Q4 Q2 8 5 6 2 7 3 Q1 1 1/2 ALD1103 Q3 ISOURCE = ISET = V+ - Vt RSET ~ ~ V+ - 1.0 = = RSET 4 RSET Q1, Q2 : N - Channel MOSFET Q3, Q4: P - Channel MOSFET CASCODE CURRENT SOURCES V+ = +5V V+ = +5V ISET ISOURCE Q4 RSET Q1 Q3 Q3 Q4 Q2 Q2 Q1 ISET RSET ISOURCE ISOURCE = ISET = V+ - 2Vt RSET ~ = 3 RSET Q1, Q2, Q3, Q4: N - Channel MOSFET (ALD1101 or ALD1103) Q1, Q2, Q3, Q4: P - Channel MOSFET (ALD1102 or ALD1103) ALD1103 Advanced Linear Devices 6 |
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